ST STD5N20LT4

ST · FETs & Power MOSFETs · MPN STD5N20LT4

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Specifications

Gate Charge(Qg)5nC@160V
Drain to Source Voltage200V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)650mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)242pF

Technical details

N-Channel 200V 5A 33W Surface Mount DPAK

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