ST · FETs & Power MOSFETs · MPN STD4NK80Z-1
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| Gate Charge(Qg) | 22.5nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 3.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 575pF |
800V 3A 3V 25W 3.5Ω@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS