ST STD4NK100Z

ST · FETs & Power MOSFETs · MPN STD4NK100Z

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Specifications

Gate Charge(Qg)18nC@800V
Drain to Source Voltage1kV
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)6.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)601pF

Technical details

N-Channel 1kV 2.2A 90W Surface Mount TO-252(DPAK)

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