ST STD4N80K5

ST · FETs & Power MOSFETs · MPN STD4N80K5

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Specifications

Gate Charge(Qg)10.5nC@640V
Drain to Source Voltage800V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.5pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)175pF

Technical details

N-Channel 800V 3A 60W Surface Mount TO-252(DPAK)

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