ST STD4N62K3

ST · FETs & Power MOSFETs · MPN STD4N62K3

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage620V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)3.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)550pF
TypeN-Channel

Technical details

N-Channel 620V 3.8A 70W Surface Mount DPAK

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