ST STD45N10F7

ST · FETs & Power MOSFETs · MPN STD45N10F7

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.64nF
TypeN-Channel

Technical details

100V 45A 4.5V 60W 18mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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