ST STD3NK80Z-1

ST · FETs & Power MOSFETs · MPN STD3NK80Z-1

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation70W
RDS(on)4.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)485pF
TypeN-Channel

Technical details

N-Channel 800V 2.5A 70W Through Hole IPAK

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