ST STD3NK60Z-1

ST · FETs & Power MOSFETs · MPN STD3NK60Z-1

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)11.8nC@10V
Output Capacitance(Coss)43pF
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)3.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)311pF
TypeN-Channel

Technical details

N-Channel 600V 2.4A 45W Through Hole IPAK

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