ST STD35P6LLF6

ST · FETs & Power MOSFETs · MPN STD35P6LLF6

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Specifications

Gate Charge(Qg)30nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)262pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)3.78nF
TypeP-Channel

Technical details

P-Channel 60V 35A 70W Surface Mount TO-252(DPAK)

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