ST STD30N10F7

ST · FETs & Power MOSFETs · MPN STD30N10F7

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation50W
RDS(on)24mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)24pF
Input Capacitance(Ciss)1.27nF
TypeN-Channel

Technical details

100V 32A 4.5V 50W 24mΩ@10V N-Channel TO-252 Single FETs, MOSFETs RoHS

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