ST · FETs & Power MOSFETs · MPN STD2HNK60Z-1
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 45W |
| RDS(on) | 4.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 280pF |
N-Channel 600V 2A 45W Through Hole IPAK