ST STD2HNK60Z

ST · FETs & Power MOSFETs · MPN STD2HNK60Z

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)38pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)4.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)280pF
TypeN-Channel

Technical details

N-Channel 600V 2A 45W Surface Mount TO-252(DPAK)

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