ST STD26NF10

ST · FETs & Power MOSFETs · MPN STD26NF10

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

100V 25A 4V 100W 38mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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