ST STD25NF10T4

ST · FETs & Power MOSFETs · MPN STD25NF10T4

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Specifications

Gate Charge(Qg)55nC@80V
Drain to Source Voltage100V
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.55nF

Technical details

N-Channel 100V 25A 100W Surface Mount DPAK

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