ST STD25N10F7

ST · FETs & Power MOSFETs · MPN STD25N10F7

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)920pF
TypeN-Channel

Technical details

N-Channel 100V 25A 40W Surface Mount TO-252(DPAK)

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