ST STD1NK80ZT4

ST · FETs & Power MOSFETs · MPN STD1NK80ZT4

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Specifications

Gate Charge(Qg)7.7nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)6.7pF
RDS(on)16Ω@10V
Number1 N-channel
Input Capacitance(Ciss)160pF

Technical details

N-Channel 800V 1A 45W Surface Mount DPAK

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