ST STD1NK60T4

ST · FETs & Power MOSFETs · MPN STD1NK60T4

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Specifications

Gate Charge(Qg)7nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)23.5pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)3.8pF
RDS(on)8.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)156pF
TypeN-Channel

Technical details

N-Channel 600V 1A 30W Surface Mount DPAK

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