ST · FETs & Power MOSFETs · MPN STD1NK60-1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 7nC@480V |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF |
| RDS(on) | 8.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 156pF |
N-Channel 600V 1A 30W Through Hole IPAK