ST · FETs & Power MOSFETs · MPN STD1HN60K3
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| Gate Charge(Qg) | 9.5nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 1.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 27W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 6.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 140pF |
N-Channel 600V 1.2A 27W Surface Mount DPAK