ST STD18N65M5

ST · FETs & Power MOSFETs · MPN STD18N65M5

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)32pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)3.2pF
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.24nF
Vgs25V

Technical details

N-Channel 650V 15A 110W Surface Mount DPAK(TO-252)

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