ST · FETs & Power MOSFETs · MPN STD18N55M5
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 550V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 192mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
550V 16A 5V 110W 192mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS