ST STD170N4F7AG

ST · FETs & Power MOSFETs · MPN STD170N4F7AG

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.43nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation172W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.35nF
TypeN-Channel

Technical details

40V 80A 4V 172W 2.8mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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