ST · FETs & Power MOSFETs · MPN STD16N50M2
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.35pF |
| RDS(on) | 240mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 710pF |
13A 4V 110W 240mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS