ST STD15N50M2AG

ST · FETs & Power MOSFETs · MPN STD15N50M2AG

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Specifications

Gate Charge(Qg)13nC@400V
Drain to Source Voltage500V
Current - Continuous Drain(Id)10A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)0.8pF
RDS(on)336mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)530pF

Technical details

500V 10A 2V 85W 336mΩ@10V 1 N-channel DPAK(TO-252) Single FETs, MOSFETs RoHS

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