ST STD13NM60ND

ST · FETs & Power MOSFETs · MPN STD13NM60ND

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)24.5nC@10V
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation109W
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)845pF
TypeN-Channel

Technical details

N-Channel 600V 11A 109W Surface Mount DPAK

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