ST STD13N60M6

ST · FETs & Power MOSFETs · MPN STD13N60M6

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)34.4pF
Current - Continuous Drain(Id)10A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation92W
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)509pF
TypeN-Channel

Technical details

600V 10A 4.75V 92W 380mΩ@10V 1 N-channel N-Channel DPAK(TO-252) Single FETs, MOSFETs RoHS

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