ST STD13N60DM2

ST · FETs & Power MOSFETs · MPN STD13N60DM2

No reviews yet — be the first to review ST STD13N60DM2.

Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)38pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)0.9pF
RDS(on)365mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)730pF
TypeN-Channel

Technical details

N-Channel 600V 11A 110W Surface Mount TO-252(DPAK)

Related FETs & Power MOSFETs