ST · FETs & Power MOSFETs · MPN STD12N60M6
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| Gate Charge(Qg) | 12.3nC@480V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF |
| RDS(on) | 450mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 452pF |
600V 9A 96W Surface Mount DPAK