ST · FETs & Power MOSFETs · MPN STD12N50DM2
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 16nC@10V |
| Output Capacitance(Coss) | 38pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 628pF |
| Type | N-Channel |
500V 11A 5V 110W 350mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS