ST STD120N4LF6

ST · FETs & Power MOSFETs · MPN STD120N4LF6

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Specifications

Output Capacitance(Coss)650pF
Pd - Power Dissipation110W
Configuration-
Gate Charge(Qg)80nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)375pF
RDS(on)5mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)4.3nF

Technical details

110W 40V 80A 3V 5mΩ@5V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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