ST STD11N60M6

ST · FETs & Power MOSFETs · MPN STD11N60M6

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Specifications

Gate Charge(Qg)10.3nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)500mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)387pF
TypeN-Channel

Technical details

N-Channel 600V 8A 90W Surface Mount DPAK

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