ST · FETs & Power MOSFETs · MPN STD11N50M2
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 85W |
| RDS(on) | 530mΩ@10V |
| Type | N-Channel |
500V 8A 4V 85W 530mΩ@10V N-Channel DPAK Single FETs, MOSFETs RoHS