ST STD110N8F6

ST · FETs & Power MOSFETs · MPN STD110N8F6

No reviews yet — be the first to review ST STD110N8F6.

Specifications

Gate Charge(Qg)150nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)5.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.13nF
TypeN-Channel

Technical details

N-Channel 80V 80A 167W Surface Mount DPAK

Related FETs & Power MOSFETs