ST · FETs & Power MOSFETs · MPN STD10PF06T4
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 200mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 850pF |
60V 10A 2V 40W 200mΩ@10V 1 P-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS