ST STD10PF06-1

ST · FETs & Power MOSFETs · MPN STD10PF06-1

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)21nC@10V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)10A
Operating Temperature --65℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)200mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)850pF
TypeP-Channel

Technical details

60V 10A 4V 40W 200mΩ@10V 1 P-Channel P-Channel IPAK Single FETs, MOSFETs RoHS

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