ST · FETs & Power MOSFETs · MPN STD10P6F6
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| Gate Charge(Qg) | 6.4nC@30V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 340pF |
P-Channel 60V 10A 35W Surface Mount DPAK