ST STD10P6F6

ST · FETs & Power MOSFETs · MPN STD10P6F6

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Specifications

Gate Charge(Qg)6.4nC@30V
Drain to Source Voltage60V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)160mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)340pF

Technical details

P-Channel 60V 10A 35W Surface Mount DPAK

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