ST · FETs & Power MOSFETs · MPN STD10P10F6
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 16.5nC@10V |
| Output Capacitance(Coss) | 45pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 180mΩ@10V |
| Input Capacitance(Ciss) | 864pF |
| Type | P-Channel |
100V 10A 4V 40W 180mΩ@10V P-Channel TO-252-2 Single FETs, MOSFETs RoHS