ST STD10NF10T4

ST · FETs & Power MOSFETs · MPN STD10NF10T4

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Specifications

Gate Charge(Qg)21nC@80V
Drain to Source Voltage100V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)130mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)460pF

Technical details

N-Channel 100V 13A 50W Surface Mount TO-252(DPAK)

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