ST STD10N60M2

ST · FETs & Power MOSFETs · MPN STD10N60M2

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)13.5nC@10V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)0.84pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)400pF
TypeN-Channel

Technical details

N-Channel 600V 7.5A 85W Surface Mount DPAK

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