ST · FETs & Power MOSFETs · MPN STD105N10F7AG
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.369nF |
| Type | N-Channel |
100V 80A 4.5V 120W 8mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS