ST STB9NK90Z

ST · FETs & Power MOSFETs · MPN STB9NK90Z

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)72nC@10V
Output Capacitance(Coss)190pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.115nF
TypeN-Channel

Technical details

900V 8A 4.5V 160W 1.3Ω@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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