ST STB9NK80Z

ST · FETs & Power MOSFETs · MPN STB9NK80Z

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)122pF
Current - Continuous Drain(Id)5.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.138nF
TypeN-Channel

Technical details

N-Channel 800V 5.2A 125W Surface Mount D2PAK

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