ST STB9NK60ZT4

ST · FETs & Power MOSFETs · MPN STB9NK60ZT4

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)53nC@10V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation125W
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.11nF
TypeN-Channel

Technical details

N-Channel 600V 7A 125W Surface Mount D2PAK

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