ST STB9NK50ZT4

ST · FETs & Power MOSFETs · MPN STB9NK50ZT4

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)7.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)850mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)910pF
TypeN-Channel

Technical details

N-Channel 500V 7.2A 110W Surface Mount D2PAK

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