ST · FETs & Power MOSFETs · MPN STB8NM60T4
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| Gate Charge(Qg) | 18nC@400V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 400pF |
N-Channel 650V 5A 100W Surface Mount D2PAK