ST STB80NF55L-06T4

ST · FETs & Power MOSFETs · MPN STB80NF55L-06T4

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Specifications

Drain to Source Voltage55V
Gate Charge(Qg)136nC@5V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation300W
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.85nF

Technical details

55V 80A 1V 300W 6.5mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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