ST STB80NF10T4

ST · FETs & Power MOSFETs · MPN STB80NF10T4

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Specifications

Gate Charge(Qg)182nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)175pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.5nF

Technical details

N-Channel 100V 80A 300W Surface Mount D2PAK

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