ST · FETs & Power MOSFETs · MPN STB80N4F6AG
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Output Capacitance(Coss) | 335pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 70W |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.15nF |
| Type | N-Channel |
40V 80A 4V 70W 6mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS