ST · FETs & Power MOSFETs · MPN STB80N20M5
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| Gate Charge(Qg) | 108nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 20mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.08nF |
| Type | N-Channel |
200V 65A 4V 190W 20mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS