ST · FETs & Power MOSFETs · MPN STB7NK80ZT4
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| Gate Charge(Qg) | 56nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 5.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 1.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.138nF |
| Type | N-Channel |
800V 5.2A 4.5V 125W 1.8Ω@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS